c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 rev.a oct .2010 silicon n-channel mosfet features 12a, 600v,r ds(on) (max 0.65 )@v gs =10v ultra-low gate charge(typical 43 nc) fast switching capability 100%avalanche tested maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi s advanced planar stripe, dmos technology. this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a e lectronic lamp ballast. absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 12 a continuous drain current(@tc=100 ) 7.6 a i dm drain current pulsed (note1) 48 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 880 mj e ar repetitive avalanche energy (note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation(@tc=25 ) 250 w derating factor above 25 2.0 w/ t j, t stg junction and storage temperature -55~150 t l maximum lead temperature for soldering purposes 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance, junction-to-case - - 0.50 /w r qcs thermal resistance, case-to-sink - 0.5 - /w r qja thermal resistance, junction-to-ambient - - 62.5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 2 / 7 electrical characteristics (tc = 25 c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 na gate ? source breakdown voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cut ? off current i dss v ds = 500 v, v gs = 0 v - - 1 a drain ? source breakdown voltage v (br)dss i d = 250 a, v gs = 0 v 600 - - v break voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 5 - v/ gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 3 - 4.5 v drain ? source on resistance r ds(on) v gs = 10 v, i d = 6.0a - 0.37 0.65 forward transconductance gfs v ds = 50 v, i d = 6.0a - 15 - s input capacitance c iss v ds = 25 v, v gs = 0 v , f = 1 mhz - 1580 2055 pf reverse transfer capacitance c rss - 19 2 4 output capacitance c oss - 180 235 switching time rise time tr v dd =250 v, i d =12a r g =9.1 rd=31 (note4,5) - 25 60 ns turn ? on time ton - 100 210 fall time tf - 130 270 turn ? off time toff - 100 210 total gate charge (gate ? source plus gate ? drain) qg v dd = 400 v, v gs = 10 v, i d = 1 a (note4,5) - 43 56 nc gate ? source charge qgs - 7.5 - gate ? drain ( miller ) charge qgd - 18.5 - source ? drain ratings and characteristics (ta = 25 c) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 12 a pulse drain reverse current i drp - - - 48 a forward voltage (diode) v dsf i dr = 12 a, v gs = 0 v - - 1.4 v reverse recovery time t rr i dr = 12 a, v gs = 0 v, di dr / dt = 100 a / s - 418 - ns reverse recovery charge q rr - 4.85 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l=11.2mh,i as =12a,v dd =50v,r g =25 ,starting t j =25 3.i sd 12a,di/dt 300a/us, v dd steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer c haracteristics fig.3 capacitance variation vs drain voltage fig.4 breakdown voltage variation vs temperature fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 4 / 7 fig.7 maximum safe operation area fig.8 maximum drain current vs case temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 5 / 7 fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf p p p p 1 1 1 1 2 2 2 2 n60 n60 n60 n60 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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